INFLUENCE OF SUBSTRATE-TEMPERATURE AND ANNEALING TREATMENTS ON THE PROPERTIES OF GLOW-DISCHARGE AND SPUTTERED A-SIXC1-X-H FILMS

被引：8

作者：

DEMICHELIS, F ^{[1
]}

PIRRI, CF ^{[1
]}

TRESSO, E ^{[1
]}

BENEDETTO, G ^{[1
]}

机构：

[1] IEN GALILEO FERRARIS, I-10135 TURIN, ITALY

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1991年 / 63卷 / 06期

关键词：

D O I：

10.1080/13642819108205555

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In order to improve our understanding of the role of hydrogen and its influence on the electronic properties of amorphous silicon carbide alloys, we have investigated the optical, electrical and structural properties of films deposited by glow discharge and by sputtering on substrates held at different temperature and after annealing at temperatures in the range 100-400-degrees-C. From the experimental results we deduce that annealing produces a reorganization of the amorphous network and hence a reduction in the number of unsatisfied bonds.

引用

页码：1223 / 1233

页数：11

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