FABRICATION OF S-N-S JUNCTION WITH THE NORMAL LAYER OF INSB

被引：3

作者：

HATO, T

AKAIKE, H

TAKAI, Y

HAYAKAWA, H

机构：

[1] Department of Electronics, Nagoya University, Nagoya, 464-01, Furo-Cho, Chikusa-Ku

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 7B期

关键词：

S-N-S; INSB; SUPERCONDUCTOR; WEAK LINK; JUNCTION; COHERENCE LENGTH; PROXIMITY;

D O I：

10.1143/JJAP.30.L1273

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Superconductor-semiconductor-superconductor weak links with a normal layer of InSb thin film were fabricated. A large normal resistance of 16 OMEGA and a critical supercurrent of 50-mu-A were obtained at 4.2 K for a channel length of 0.19-mu-m between Nb electrodes. The normal resistance of 16 OMEGA is about 40 times as large as that of a junction with the normal layer of a Si bulk crystal.

引用

页码：L1273 / L1275

页数：3

共 6 条

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