MODULATION SPECTROSCOPIES ON A GAAS INAS GAAS SINGLE-MONOLAYER STRUCTURE

被引：9

作者：

CASTRILLO, P

ARMELLES, G

RUIZ, A

BRIONES, F

机构：

[1] Centro Nacional de Microelectronica, CSIC. Serrano, Madrid

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1991年 / 30卷 / 10B期

关键词：

GAAS INAS GAAS SINGLE-MONOLAYER STRUCTURE; TRANSITION CHARACTERISTIC; MODULATION MECHANISM; PIEZOREFLECTANCE; PHOTOREFLECTANCE; REFLECTIVITY; ATOMIC LAYER MOLECULAR BEAM EPITAXY;

D O I：

10.1143/JJAP.30.L1784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Piezoreflectance, photoreflectance and reflectivity measurements have been performed on a sample consisting of one InAs monomolecular plane in bulklike GaAs grown by atomic layer molecular beam epitaxy. The heavy-hole and light-hole characteristics of the two excitonic InAs-related transitions observed are experimentally elucidated for the first time. The electric field modulation observed in the photoreflectance spectra of such a heterostrvcture cannot be attributed to the quantum-confined Stark effect.

引用

页码：L1784 / L1786

页数：3

共 18 条

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