COMPARISON OF FLOATING GATE NEURAL NETWORK MEMORY CELLS IN STANDARD VLSI CMOS TECHNOLOGY

被引:14
作者
DURFEE, DA [1 ]
SHOUCAIR, FS [1 ]
机构
[1] BROWN UNIV, DIV ENGN, PROVIDENCE, RI 02912 USA
来源
IEEE TRANSACTIONS ON NEURAL NETWORKS | 1992年 / 3卷 / 03期
关键词
D O I
10.1109/72.129407
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
Several floating gate MOSFET structures, for potential use as analog memory elements in neural networks, have been fabricated in a standard 2-mu-m double-polysilicon CMOS process. Their physical and programming characteristics are compared with each other and with similar structures reported in the literature. None of the circuits under consideration require special fabrication techniques. The criteria used to determine the structure most suitable for neural network memory applications include the symmetry of charging and discharging characteristics, programming voltage magnitudes, the area required, and the effectiveness of geometric field enhancement techniques. This work provides a layout for an analog neural network memory based on previously unexplored criteria and results. We have found that the best designs a) use the poly1 to poly2 oxide for injection; b) need not utilize "field enhancement" techniques; c) use poly1 to diffusion oxide for a coupling capacitor; and d) size capacitor ratios to provide a wide range of possible programming voltages.
引用
收藏
页码:347 / 353
页数:7
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