SPIN-VALVE RAM CELL

被引：105

作者：

TANG, DD

WANG, PK

SPERIOSU, VS

LE, S

KUNG, KK

机构：

[1] IBM Almaden Research Center, San Jose, CA 95120

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1995年 / 31卷 / 06期

关键词：

D O I：

10.1109/20.490329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the design and the characteristics of a nonvolatile memory cell using giant magneto-resistance effects. Unlike other magnetic memory cells [1], the present cell design [2] exploits the full Delta R of the spin valve material. A dc voltage difference between the two cell states of 30 mV range has been realized on a cell stripe only 6-micron long, making it compatible with the high-speed sensing schemes presently employed in silicon RAMs. The cell switches states in sub-nanoseconds. Its performance/density is close to that of the static RAM cell.

引用

页码：3206 / 3208

页数：3