ELECTROPHYSICAL PROPERTIES OF NON-DOPED EPITAXIAL GAAS IN RANGE FROM 10 TO 1100 DEGREESK

被引：11

作者：

KHOKHLOV, VI ^{[1
]}

SIDOROV, YG ^{[1
]}

DVORETSKII, SA ^{[1
]}

机构：

[1] ACAD SCI USSR, SEMICOND PHYS INST, NOVOSIBIRSK, USSR

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1974年 / 25卷 / 01期

关键词：

D O I：

10.1002/pssa.2210250130

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：311 / 321

页数：11

共 29 条

[1]

AGRAPHENINA EP, 1972, ELEKTRONNAYA TEKH 2, P129

[2] IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN N-GALLIUM ARSENIDE [J].

BASINSKI, J ;

OLIVIER, R .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (01) :119-&

[3]

BLAKEMORE JS, 1962, SEMICONDUCTOR STATIS

[4] ELECTRICAL PROPERTIES OF N-TYPE EPITAXIAL GAAS AT HIGH-TEMPERATURES [J].

BLOOD, P .

PHYSICAL REVIEW B, 1972, 6 (06) :2257-&

[5] BOUND-EXCITON FREE-EXCITON BAND-ACCEPTOR DONOR-ACCEPTOR AND AUGER RECOMBINATION IN GAAS [J].

BOGARDUS, EH ;

BEBB, HB .

PHYSICAL REVIEW, 1968, 176 (03) :993-&

[6]

BOLGER DE, 1966, P INT S GAAS READING, P16

[7]

BOLKHOVITYANOVA RI, 1973, IAN SSSR NEORG MATER, V9, P895

[8]

BROOKS H, 1951, PHYS REV, V83, P879

[9]

BROOKS H, 1951, ADV ELECTRONICS ELEC, V7, P158

[10] HIGH-FIELD TRANSPORT IN N-TYPE GAAS [J].

CONWELL, EM ;

VASSELL, MO .

PHYSICAL REVIEW, 1968, 166 (03) :797-+

← 1 2 3 →