GERMANIUM IMPLANTATION INTO SILICON - AN ALTERNATE PRE-AMORPHIZATION RAPID THERMAL ANNEALING PROCEDURE FOR SHALLOW JUNCTION FORMATION

被引：55

作者：

SADANA, DK

MASZARA, W

WORTMANN, JJ

ROZGONYI, GA

CHU, WK

机构：

[1] N CAROLINA STATE UNIV,RALEIGH,NC 27650

[2] UNIV N CAROLINA,CHAPEL HILL,NC 27514

来源：

关键词：

D O I：

10.1149/1.2115733

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：943 / 945

页数：3

共 9 条

[1] HOFKER WK, 1975, THESIS
[2] MASZARA W, 1984, BEAM SOLID INTERACTI
[3] Pavlov P. V., 1974, Soviet Physics - Solid State, V15, P2257
[4] SADANA DK, 1983, P I PHYS LONDON
[5] SADANA DK, 1984, BEAM SOLID INTERACTI
[6] SADANA DK, 1977, ELECTRON LETT, V15, P615
[7] SEDGWICK TD, 1982, VLSI SCI TECHNOLOGY, P130
[8] SEIDEL TE, UNPUB VLSI 1984
[9] RECRYSTALLIZATION OF IMPLANTED AMORPHOUS SILICON LAYERS .1. ELECTRICAL-PROPERTIES OF SILICON IMPLANTED WITH BF2+ OR SI++B+
TSAI, MY
STREETMAN, BG
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 183 - 187