SURFACE-ENHANCED ALLOY EFFECTS IN HG1-XCDXTE - (100) SURFACE-STATES AND THE SITE-DEPENDENT COHERENT-POTENTIAL APPROXIMATION

被引：8

作者：

BRYANT, GW

机构：

来源：

PHYSICAL REVIEW LETTERS | 1985年 / 55卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.55.1786

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1786 / 1789

页数：4

共 21 条

[1] UNIFIED THEORY OF POINT-DEFECT ELECTRONIC STATES, CORE EXCITONS, AND INTRINSIC ELECTRONIC STATES AT SEMICONDUCTOR SURFACES [J].

ALLEN, RE ;

DOW, JD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :383-387

[2] ROLE OF SURFACE ANTISITE DEFECTS IN THE FORMATION OF SCHOTTKY BARRIERS [J].

ALLEN, RE ;

DOW, JD .

PHYSICAL REVIEW B, 1982, 25 (02) :1423-1426

[3]

ALLEN RE, 1981, SURF SCI, V110, pL625, DOI 10.1016/0039-6028(81)90633-6

[4] SURFACE AND BULK ELECTRONIC-STRUCTURE OF DISORDERED METALLIC ALLOYS [J].

BANSIL, A ;

PESSA, M .

PHYSICA SCRIPTA, 1983, T4 :52-60

[5] ELECTRONIC-STRUCTURE OF ALLOY SURFACES - COHERENT-POTENTIAL APPROXIMATION [J].

BERK, NF .

SURFACE SCIENCE, 1975, 48 (02) :289-303

[6] SURFACE-STATES OF TERNARY SEMICONDUCTOR ALLOYS - EFFECT OF ALLOY FLUCTUATIONS IN ONE-DIMENSIONAL MODELS WITH REALISTIC ATOMS [J].

BRYANT, GW .

PHYSICAL REVIEW B, 1985, 31 (08) :5166-5177

[7] EFFECT OF ALLOY FLUCTUATIONS ON THE SURFACE-STATES OF TERNARY SEMICONDUCTOR ALLOYS - ONE-DIMENSIONAL MODELS [J].

BRYANT, GW .

SURFACE SCIENCE, 1985, 154 (2-3) :435-454

[8] ELECTRONIC-STRUCTURE OF DISORDERED ALLOYS - ITERATION SCHEME CONVERGING TO COHERENT-POTENTIAL APPROXIMATION [J].

CHEN, AB .

PHYSICAL REVIEW B, 1973, 7 (06) :2230-2238

[9] ELECTRONIC-STRUCTURE OF BULK AND SURFACE DISORDERED ALLOYS [J].

DESJONQUERES, MC ;

CYROTLACKMANN, F .

JOURNAL OF PHYSICS F-METAL PHYSICS, 1977, 7 (01) :61-73

[10] ELECTRONIC-STRUCTURE OF HG1-XCDXTE [J].

HASS, KC ;

EHRENREICH, H ;

VELICKY, B .

PHYSICAL REVIEW B, 1983, 27 (02) :1088-1100

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