HIGH-PERFORMANCE SI/SIGE N-TYPE MODULATION-DOPED TRANSISTORS

被引：81

作者：

ISMAIL, K ^{[1
]}

RISHTON, S ^{[1
]}

CHU, JO ^{[1
]}

CHAN, K ^{[1
]}

MEYERSON, BS ^{[1
]}

机构：

[1] CAIRO UNIV,FAC ENGN,DEPT ELECTR & COMMUN,GIZA,EGYPT

来源：

IEEE ELECTRON DEVICE LETTERS | 1993年 / 14卷 / 07期

关键词：

Chemical vapor deposition - Germanium compounds - Junction gate field effect transistors - Performance - Semiconducting silicon - Semiconductor doping - Silicon compounds - Substrates;

D O I：

10.1109/55.225569

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Enhancement-mode Si/SiGe n-type modulation-doped transistors with a 0.5-mum-length T-gate have been fabricted. Peak transconductances of 390 mS/mm at room temperature and 520 mS/mm at 77 K have been achieved. These high values are attributable to a combination of the high quality of the material used, having a room temperature mobility of 2600 cm2/V . s at an electron sheet concentration of 1.5 x 10(12) cm2, and an optimized layer design that minimizes the parasitic series resistance and the gate-to-channel distance.

引用

页码：348 / 350

页数：3