MATERIAL PROPERTIES AND CLUSTERING IN MOLECULAR-BEAM EPITAXIAL IN0.52AL0.48AS AND IN1-X-YGAXALYAS

被引:38
作者
HONG, WP [1 ]
CHIN, A [1 ]
DEBBAR, N [1 ]
HINCKLEY, J [1 ]
BHATTACHARYA, PK [1 ]
SINGH, J [1 ]
CLARKE, RC [1 ]
机构
[1] UNIV MICHIGAN,DEPT PHYS,ANN ARBOR,MI 48109
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1987年 / 5卷 / 03期
关键词
D O I
10.1116/1.583754
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:800 / 801
页数:2
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[2]  
CAPASSO F, 1985, SEMICONDUCTORS SEM D, V22, P128
[3]   EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON-TRANSPORT IN IN0.53GA0.47AS [J].
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