POSITRON-ANNIHILATION AND PROFILES OF RADIATION DAMAGES IN GAAS AND SI CRYSTALS IRRADIATED BY SUPERCURRENT PROTON OR ELECTRON-BEAMS

被引：8

作者：

POGREBNYAK, AD

BOYARKO, EY

KRYUCHKOV, YY

VOROBEV, SA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 81卷 / 01期

关键词：

D O I：

10.1002/pssa.2210810123

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：217 / 225

页数：9

共 16 条

[1]

ANNENKOV YM, 1980, PHYS LETT A, V84, P43

[2]

BRANDT W, 1975, PHYS LETT A, V50, P39

[3]

CHERNOV IP, 1981, FIZ TEKH POLUPROV, V14, P2271

[4]

DAVIES DE, 1980, APPL PHYS LETT, V37, P43

[5]

EMTSEV VV, 1981, IMPURITIES POINT DEF

[6] ANNIHILATION OF POSITRONS IN ELECTRON-IRRADIATED SILICON-CRYSTALS [J].

FUHS, W ;

HOLZHAUER, U ;

MANTL, S ;

RICHTER, FW ;

STURM, R .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (01) :69-75

[7]

LANG PV, 1977, 1976 P C RAD EFF SEM

[8]

POGREBNYAK AD, 1981, ZH TEKH FIZ+, V51, P1942

[9] POSITRON-ANNIHILATION AND POSITRON PROFILES IN SI, IRRADIATED BY SUPER DENSE ELECTRON PULSES [J].

POGREBNYAK, AD ;

KUZMINIKH, VA ;

RASZOV, VI ;

RUDNEV, AS .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (02) :K79-K82

[10] POSITRON PROFILES AND POSITRON-ANNIHILATION IN THIN-LAYERS [J].

POGREBNYAK, AD ;

KUZMINIKH, VA ;

AREFEV, KP .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (01) :145-151

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