MANY-BODY THEORY FOR THE DENSE EXCITON GAS OF DIRECT SEMICONDUCTORS .2. CALCULATION OF EXCITON LEVEL SHIFT AND DAMPING IN DEPENDENCE ON EXCITON DENSITY

被引：42

作者：

BOLDT, F

HENNEBERGER, K

MAY, V

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 130卷 / 02期

关键词：

D O I：

10.1002/pssb.2221300231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：675 / 687

页数：13

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