OPTICAL-PROPERTIES OF ZNSE

被引:323
作者
ADACHI, S [1 ]
TAGUCHI, T [1 ]
机构
[1] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN
来源
PHYSICAL REVIEW B | 1991年 / 43卷 / 12期
关键词
D O I
10.1103/PhysRevB.43.9569
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied the optical response of ZnSe in the 1.5-5.3-eV photon-energy range at room temperature by spectroscopic ellipsometry. The measured dielectric-function spectra reveal distinct structures at energies of the E0, E0 + DELTA-0, E1, and E1 + DELTA-1 critical points (CP's). These data are analyzed on the basis of a simplified model of the interband transitions. The E0-(E0 + DELTA-0) structures are characterized by a three-dimensional M0 CP, the E1-(E1 + DELTA-1) structures by a two-dimensional M0 CP, and the E2 structure by a classical Lorentzian oscillator (damped harmonic oscillator). The experimental data could not be explained within the framework of the one-electron approximation, since excitonic effects may profoundly modify the CP singularity structure. The model is thus made to account for the excitonic effects at these CP's; our results are in satisfactory agreement with the experiment over the entire range of photon energies. Dielectric-function-related optical constants of ZnSe, such as the refractive index, the extinction coefficient, and the absorption coefficient, are also presented and analyzed.
引用
收藏
页码:9569 / 9577
页数:9
相关论文
共 73 条
[21]   ELECTRONIC-STRUCTURE OF ZNS, ZNSE, ZNTE, AND THEIR PSEUDOBINARY ALLOYS [J].
BERNARD, JE ;
ZUNGER, A .
PHYSICAL REVIEW B, 1987, 36 (06) :3199-3228
[22]   FUNDAMENTAL REFLECTIVITY SPECTRUM OF SEMICONDUCTORS WITH ZINC-BLENDE STRUCTURE [J].
CARDONA, M .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2151-&
[23]   ABSORPTION SPECTRUM OF GERMANIUM AND ZINC-BLENDE-TYPE MATERIALS AT ENERGIES HIGHER THAN FUNDAMENTAL ABSORPTION EDGE [J].
CARDONA, M ;
HARBEKE, G .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (04) :813-&
[24]   RELATIVISTIC BAND-STRUCTURE AND SPIN-ORBIT-SPLITTING OF ZINCBLENDE-TYPE SEMICONDUCTORS [J].
CARDONA, M ;
CHRISTENSEN, NE ;
FASOL, G .
PHYSICAL REVIEW B, 1988, 38 (03) :1806-1827
[25]   HYDROSTATIC PRESSURE COEFFIEIENTS AND DEFORMATION POTENTIALS FOR II-VI COMPOUNDS [J].
CERDEIRA, F ;
DEWITT, JS ;
ROSSLER, U ;
CARDONA, M .
PHYSICA STATUS SOLIDI, 1970, 41 (02) :735-&
[26]   CALCULATED VALENCE-BAND DENSITIES OF STATES AND PHOTOEMISSION SPECTRA OF DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, J ;
CHADI, DJ ;
COHEN, ML .
PHYSICAL REVIEW B, 1973, 8 (06) :2786-2794
[27]   NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].
CHELIKOWSKY, JR ;
COHEN, ML .
PHYSICAL REVIEW B, 1976, 14 (02) :556-582
[28]   VALENCE-BAND AND CONDUCTION-BAND DENSITIES OF STATES FOR TETRAHEDRAL SEMICONDUCTORS - THEORY AND EXPERIMENT [J].
CHELIKOWSKY, JR ;
WAGENER, TJ ;
WEAVER, JH ;
JIN, A .
PHYSICAL REVIEW B, 1989, 40 (14) :9644-9651
[29]   BAND STRUCTURES AND PSEUDOPOTENTIAL FORM FACTORS FOR 14 SEMICONDUCTORS OF DIAMOND AND ZINC-BLENDE STRUCTURES [J].
COHEN, ML ;
BERGSTRESSER, TK .
PHYSICAL REVIEW, 1966, 141 (02) :789-+
[30]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF BULK ZNSE [J].
CONTINENZA, A ;
MASSIDDA, S ;
FREEMAN, AJ .
PHYSICAL REVIEW B, 1988, 38 (18) :12996-13001