SLOW-WAVE ELECTRODE FOR USE IN COMPOUND SEMICONDUCTOR ELECTROOPTIC MODULATORS

A slow-wave electrode structure for integrated optics traveling-wave modulators in which the microwave's effective refractive index is matched to the optical wave's effective refractive index is described. The electrode structure is a capacitively loaded coplanar strip waveguide which can be formed in a single layer of metallization. Fabrication can be accomplished by a single photo-resist patterning, followed by an etch and a standard lift-off technique. Based on the use of gallium arsenide substrates and modern lithographic techniques, allowing fabrication with micron scale resolution, slow-wave electrodes having a microwave effective refractive index of 3.5, as well as, 50 and 75-OMEGA characteristic impedances are proposed. The theory of the slow-wave electrodes is developed, also, slow-wave electrodes have been designed, fabricated, and tested to verify the theory. Measurement results are found to agree well with the theory.