CHARACTERIZATION OF SILICON FIELD-EMISSION MICROTRIODES

The properties of single silicon field emission microtriodes have been examined. Gate and collector currents were measured in a vacuum of 2 X 10(-8) Torr, and current-voltage, current-time, Fowler-Nordheim (I/V2 versus I/V), and triode characteristics were determined. The data showed that the electron emission followed Fowler-Nordheim behavior. Single emitters had turn-on gate-to-cathode voltages (V) above 25 V (typically 50-90 V) and reproducible emission currents were measured in the range 5 pA-1 muA. Temporal fluctuations in emission current of 10%, 16%, and 40% were found for emission currents of 0.35, 50 nA, and 0.5 muA, respectively. The triode characteristics showed an I(g)/I(c). ratio of 0.25% and higher. Transconductances were found to be 3 x 10(-8) OMEGA-1/tip. Electrostatic discharge and other device failure mechanisms have been observed and are described.