ION DECHANNELING DUE TO LATTICE STRAINS IN SEMICONDUCTOR SUPER-LATTICES

被引：25

作者：

BARRETT, JH

机构：

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.28.2328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2328 / 2334

页数：7

共 17 条

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