VAPOR-LIQUID-SOLID GROWTH OF GALLIUM PHOSPHIDE (WHISKERS 900 DEGREES C E)

被引:26
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HOLONYAK, N
WOLFE, CM
MOORE, JS
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10.1063/1.1754167
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O59 [应用物理学];
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页码:64 / &
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[1]   VAPOR-SOLID INTERFACE OF GA ( AS1-ALPHA P ALPHA ) SINGLE CRYSTALS GROWN BY HALOGEN-VAPOR TRANSPORT ) GROWTH VIA SCREW DISLOCATIONS E ) [J].
HOLONYAK, N ;
WOLFE, CM .
APPLIED PHYSICS LETTERS, 1964, 5 (01) :19-&
[2]   VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTH ( NEW METHOD GROWTH CATALYSIS FROM IMPURITY WHISKER EPITAXIAL + LARGE CRYSTALS SI E ) [J].
WAGNER, RS ;
ELLIS, WC .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :89-&
[3]  
AF196284337