CORRELATION BETWEEN THE PHOTOREFLECTANCE IMPURITY PEAK IN SEMI-INSULATING GAAS AND THE BULK ACCEPTOR CONCENTRATION

被引:18
作者
BRIERLEY, SK
LEHR, DS
机构
[1] Raytheon Research Division, Lexington, MA 02173
关键词
D O I
10.1063/1.344988
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have measured the strength of the first-derivative peak observed below the band gap in photoreflectance spectra of semi-insulating GaAs and found that it is correlated with the bulk residual acceptor concentration. The apparent energy separation of the impurity peak is not fixed, but varies from sample to sample.
引用
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页码:3878 / 3880
页数:3
相关论文
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