CLUSTERING PARAMETER AND INTERNAL-STRESS IN III-V-TERNARY ALLOYS

被引:22
作者
KAKIMOTO, K
KATODA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1985年 / 24卷 / 08期
关键词
D O I
10.1143/JJAP.24.1022
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1022 / 1029
页数:8
相关论文
共 28 条
[1]  
BELLESSA J, 1983, 1982 P INT S GAAS RE, P529
[2]  
BERKER AS, 1964, PHYS REV, V136, P1290
[3]  
BERT NA, 1982, SOV PHYS SEMICOND+, V16, P35
[4]  
BORN M, 1964, DYNAMICAL THEORY CRY, P111
[5]   STRESS-INDUCED SHIFTS OF FIRST-ORDER RAMAN FREQUENCIES OF DIAMOND AND ZINC-BLENDE-TYPE SEMICONDUCTORS [J].
CERDEIRA, F ;
BUCHENAUER, CJ ;
CARDONA, M ;
POLLAK, FH .
PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (02) :580-+
[6]   OBSERVATIONS OF PHONON LINE BROADENING IN III-V SEMICONDUCTORS BY SURFACE REFLECTION RAMAN-SCATTERING [J].
EVANS, DJ ;
USHIODA, S .
PHYSICAL REVIEW B, 1974, 9 (04) :1638-1645
[7]   LOW-TEMPERATURE ELASTIC CONSTANTS OF GALLIUM ARSENIDE [J].
GARLAND, CW ;
PARK, KC .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (02) :759-&
[8]  
HART R, 1970, PHYS REV B, V15, P638
[9]   LONG-WAVELENGTH LATTICE-DYNAMICS OF IN1-XGAXASYP1-Y ALLOYS [J].
INOSHITA, T .
JOURNAL OF APPLIED PHYSICS, 1984, 56 (07) :2056-2064
[10]  
KAKIMOTO K, 1982, APPL PHYS LETT, V40, P826, DOI 10.1063/1.93281