THE INFLUENCE OF THE DX CENTER C-V AND IV CHARACTERISTICS OF SCHOTTKY BARRIERS IN N-TYPE ALGAAS

被引：4

作者：

GHEZZI, C

GOMBIA, E

MOSCA, R

机构：

[1] Dipartimento di Fisica, Parma Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 10B期

关键词：

D O I：

10.1088/0268-1242/6/10B/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Due to the vanishing of both electron emission and capture rates, the DX centre shows a non-equilibrium occupancy at low temperature. It is shown that this effect results in a non-uniform free-electron density profile that can be controlled by biasing the junction during cooling. Preliminary results are reported showing that the l-V characteristics of Schottky barriers on AlGaAs (x = 0.25) are affected by the DX centre occupation.

引用

页码：B31 / B33

页数：3

共 9 条

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