ANALYSIS OF THE THRESHOLD VOLTAGE AND ITS TEMPERATURE-DEPENDENCE IN ELECTROLYTE-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (EISFETS)

被引：57

作者：

BARABASH, PR

COBBOLD, RSC

WLODARSKI, WB

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23081

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1271 / 1282

页数：12

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