INFLUENCE OF GA CONCENTRATION ON THE ORDERING PROCESS OF GAXIN1-XP GROWN ON GAAS

被引：7

作者：

EYAL, A

BESERMAN, R

WEI, SH

ZUNGER, A

MAAYAN, E

KREININ, O

SALZMAN, J

WESTPHALEN, R

HEIME, K

机构：

[1] TECHNION ISRAEL INST TECHNOL,INST SOLID STATE,IL-32000 HAIFA,ISRAEL

[2] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

[3] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,W-5100 AACHEN,GERMANY

[4] TECHNION ISRAEL INST TECHNOL,DEPT ELECT ENGN,IL-32000 HAIFA,ISRAEL

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷

关键词：

LONG RANGE ORDER PARAMETER; GAXIN1-XP/GAAS; VALENCE BAND SPLITTING; ORDERING PROCESS;

D O I：

10.7567/JJAPS.32S3.716

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the ordering process of GaxIn1-xP/GaAs, for lattice matched and non-lattice matched samples in the Ga concentration range 0.51 < x < 0.57. The valence band splitting and the band gap reduction are calculated for partially ordered samples as a function of the Ga concentration and of the long range order (LRO) parameter. Using polarized photoluminescence, we compare the effect of growth temperature and that of Ga concentration on the LRO parameter. The degree of ordering depends strongly on growth temperature, in the range 600-degrees-C to 725-degrees-C. On the other hand, the change in alloy composition has a minor effect.

引用

页码：716 / 719

页数：4

共 20 条

[1] POLARIZED PIEZOMODULATED REFLECTANCE STUDY OF SPONTANEOUS ORDERING IN GAINP2 [J].