THE CONCEPT OF 2 MOBILITIES IN HOMOEPITAXIAL GROWTH

被引：39

作者：

ROSENFELD, G ^{[1
]}

POELSEMA, B ^{[1
]}

COMSA, G ^{[1
]}

机构：

[1] UNIV TWENTE, FAC TECH NATUURKUNDE, 7500 AE ENSCHEDE, NETHERLANDS

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 151卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(95)00077-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A general kinetic concept is introduced which can be used to control growth modes in homoepitaxy. Its basic idea is that during growth of a layer, the characteristic length scale associated with nucleation is deliberately varied. The power of this concept lies in the fact that it can be realized experimentally in a variety of ways and is not restricted to special systems. It helps to understand various effects reported in the literature and may serve as a guideline for future methods of growth manipulation.

引用

页码：230 / 233

页数：4

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