HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES

被引：33

作者：

MURARKA, SP ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1016/0038-1101(74)90037-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：869 / 876

页数：8

共 12 条

[1] FABRE E, 1973, AUG MET SOC AIME C P
[2] FINN MC, 1973, AUG MET SOC AIME C P
[3] IRVIN JC, 1970, IEEE INT ELECTRON DE
[4] IRVIN JC, PRIVATE COMMUNICATIO
[5] KUMAR V, TO BE PUBLISHED
[6] MARCUS RB, 1973, MAY ECS S SEM SIL
[7] MURARKA SP, TO BE PUBLISHED
[8] PETROFF P, UNPUBLISHED WORK
[9] DIFFUSION AND DETECTION OF OXYGEN IN GAAS
RACHMANN, J
BIERMANN, R
[J]. SOLID STATE COMMUNICATIONS, 1969, 7 (24) : 1771 - &
[10] EFFECT OF ALLOYING BEHAVIOR ON ELECTRICAL CHARACTERISTICS OF N-GAAS SCHOTTKY DIODES METALLIZED WITH W, AU, AND PT
SINHA, AK
POATE, JM
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (12) : 666 - 668