PARAMAGNETISM OF THE MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE

被引：35

作者：

FREY, T ^{[1
]}

MAIER, M ^{[1
]}

SCHNEIDER, J ^{[1
]}

GEHRKE, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1988年 / 21卷 / 32期

关键词：

D O I：

10.1088/0022-3719/21/32/008

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5539 / 5545

页数：7

共 10 条

[1] ANDRIANOV DG, 1983, SOV PHYS SEMICOND+, V17, P506
[2] ANDRIANOV DG, 1984, SOV PHYS SEMICOND+, V18, P162
[3] Condon E.U., 1963, THEORY ATOMIC SPECTR
[4] DECOMBARIEU A, 1976, PHONON SCATTERING SO, P340
[5] FREY T, 1988, IN PRESS J APPL PHYS
[6] HOLLAND MG, 1965, 7TH P INT C PHYS SEM, V1, P713
[7] DIAMAGNETIC SUSCEPTIBILITY OF TETRAHEDRAL SEMICONDUCTORS
HUDGENS, S
KASTNER, M
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1974, 33 (26) : 1552 - 1555
[8] LASSMANN K, 1976, SOLID STATE COMMUN, V18, P449, DOI 10.1016/0038-1098(76)90311-2
[9] ELECTRONIC-STRUCTURE OF THE NEUTRAL MANGANESE ACCEPTOR IN GALLIUM-ARSENIDE
SCHNEIDER, J
KAUFMANN, U
WILKENING, W
BAEUMLER, M
KOHL, F
[J]. PHYSICAL REVIEW LETTERS, 1987, 59 (02) : 240 - 243
[10] VANVLECK JH, 1932, THEORY ELECTRIC MAGN