33-PS OPTICAL SWITCHING OF SYMMETRICAL SELF-ELECTRO-OPTIC EFFECT DEVICES

被引：65

作者：

BOYD, GD

FOX, AM

MILLER, DAB

CHIROVSKY, LMF

DASARO, LA

KUO, JM

KOPF, RF

LENTINE, AL

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

[2] AT&T BELL LABS,NAPERVILLE,IL 60566

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 18期

关键词：

D O I：

10.1063/1.104034

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report significant improvement in the optical switching times of symmetric self-electro-optic effect devices due to enhanced tunneling by using a 35 Å barrier versus the previous 60 Å barrier thick multiple quantum well GaAs/AlxGa(1-x)As devices. Also, the voltage required for bistability was reduced from 10 V in the thick barrier devices to 3 V in the thin barrier devices with no apparent degradation in the contrast ratio.

引用

页码：1843 / 1845

页数：3

共 11 条

[1] MULTIPLE QUANTUM-WELL REFLECTION MODULATOR
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