DARK CURRENT CHARACTERISTICS OF GAAS METAL-SEMICONDUCTOR METAL (MSM) PHOTODETECTORS

被引：12

作者：

KOSCIELNIAK, WC ^{[1
]}

PELOUARD, JL ^{[1
]}

KOLBAS, RM ^{[1
]}

LITTLEJOHN, MA ^{[1
]}

机构：

[1] LAB MICROSTRUCT & MICROELECTR,CNRS,F-92220 BAGNEUX,FRANCE

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 07期

关键词：

D O I：

10.1109/16.55748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present calculations of the electron and hole components of dark current in a GaAs metal-semiconductor-metal (msm) photodetector. A quantum-mechanical model is developed that describes the electron and hole transport behavior in the contact regions which is used to determine dark current as a function of electric held. The model reduces to a conventional thermionic emission model if an ideal barrier transmission coefficient is assumed. In order to assess the accuracy of the model, photodetectors have been fabricated and tested. Theoretical calculations and experimental data are compared and good agreement is obtained. Possible modifications to enhance the usefulness of the model are discussed. © 1990 IEEE

引用

页码：1623 / 1629

页数：7

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