RESISTANCE FLUCTUATIONS IN NARROW ALGAAS/GAAS HETEROSTRUCTURES - DIRECT EVIDENCE OF FRACTIONAL CHARGE IN THE FRACTIONAL QUANTUM HALL-EFFECT - COMMENT

被引：36

作者：

LEE, PA

机构：

[1] Department of Physics, Massachusetts Institute of Technology, Cambridge

来源：

PHYSICAL REVIEW LETTERS | 1990年 / 65卷 / 17期

关键词：

D O I：

10.1103/PhysRevLett.65.2206

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A Comment on the Letter by Simmons et al., Phys. Rev. Lett. 63, 1731 (1989). © 1990 The American Physical Society.

引用

收藏

页码：2206 / 2206

页数：1

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[J]. PHYSICAL REVIEW B, 1989, 40 (02): : 1373 - 1376
[2] KIVELSON SA, UNPUB
[3] ONE-DIMENSIONAL ELECTRON-GAS IN GAAS - PERIODIC CONDUCTANCE OSCILLATIONS AS A FUNCTION OF DENSITY
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HEIBLUM, M
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[J]. PHYSICAL REVIEW B, 1989, 40 (08): : 5871 - 5874
[4] RESISTANCE FLUCTUATIONS IN NARROW ALGAAS GAAS HETEROSTRUCTURES - DIRECT EVIDENCE OF FRACTIONAL CHARGE IN THE FRACTIONAL QUANTUM HALL-EFFECT
SIMMONS, JA
WEI, HP
ENGEL, LW
TSUI, DC
SHAYEGAN, M
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (16) : 1731 - 1734
[5] CONDUCTANCE OSCILLATIONS PERIODIC IN THE DENSITY OF A ONE-DIMENSIONAL ELECTRON-GAS - COMMENT
VANHOUTEN, H
BEENAKKER, CWJ
[J]. PHYSICAL REVIEW LETTERS, 1989, 63 (17) : 1893 - 1893