FIELD-INDUCED TRANSITION OF ELECTRON NATURE IN CERU2SI2

被引：5

作者：

AOKI, H ^{[1
]}

UJI, S ^{[1
]}

TERASHIMA, T ^{[1
]}

TAKASHITA, M ^{[1
]}

ONUKI, Y ^{[1
]}

机构：

[1] UNIV TSUKUBA,INST MAT SCI,TSUKUBA,IBARAKI 305,JAPAN

来源：

PHYSICA B | 1994年 / 201卷

关键词：

D O I：

10.1016/0921-4526(94)91089-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied the de Haas-van Alphen (dHvA) effect for field ranges both below and above the metamagnetic transition field (H(m)) in CeRu2Si2. The Fermi surfaces are found to change from those of the itinerant 4f electrons below H(m) to those of the localized 4f electrons above H(m). The dHvA frequency around H(m) has been measured in detail as function of magnetic field strength and temperature. The observed variation of the frequency implies that the transition of the Fermi surface becomes less sharp at higher temperatures.

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页码：231 / 234

页数：4

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