LOCALIZED ELECTRON-STATES IN ARSENIC CHALCOGENIDES

被引：36

作者：

HALPERN, V ^{[1
]}

机构：

[1] BAR ILAN UNIV,DEPT PHYS,RAMAT GAN,ISRAEL

来源：

PHILOSOPHICAL MAGAZINE | 1976年 / 34卷 / 03期

关键词：

D O I：

10.1080/14786437608222026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：331 / 335

页数：5

共 22 条

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[9] BONDING BANDS, LONE-PAIR BANDS, AND IMPURITY STATES IN CHALCOGENIDE SEMICONDUCTORS
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[J]. PHYSICAL REVIEW LETTERS, 1972, 28 (06) : 355 - &
[10] NONRADIATIVE RECOMBINATION AT DEEP LEVELS IN GAAS AND GAP BY LATTICE-RELAXATION MULTIPHONON EMISSION
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