THEORETICAL-STUDY OF NATIVE DEFECTS IN III-V SEMICONDUCTORS

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895

[2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[3] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[4] BERNHOLC J, 1981, 1980 P INT C DEF SEM, P1

[5] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[7] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[8] DAW MS, COMMUNICATION

[9] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[10] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720

[1] SELF-CONSISTENT GREENS FUNCTION CALCULATION OF IDEAL SI VACANCY [J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 892 - 895

[2] NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J]. PHYSICAL REVIEW B, 1979, 19 (10): : 4965 - 4979

[3] SCATTERING-THEORETIC METHOD FOR DEFECTS IN SEMICONDUCTORS .1. TIGHT-BINDING DESCRIPTION OF VACANCIES IN SI, GE, AND GAAS [J]. PHYSICAL REVIEW B, 1978, 18 (04): : 1780 - 1789

[4] BERNHOLC J, 1981, 1980 P INT C DEF SEM, P1

[5] THEORY OF DEEP VACANCY LEVELS IN IN1-YGAYAS1-XPX [J]. JOURNAL DE PHYSIQUE, 1982, 43 (01): : 181 - 183

[6] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582

[7] VACANCIES NEAR SEMICONDUCTOR SURFACES [J]. PHYSICAL REVIEW B, 1979, 20 (12): : 5150 - 5156

[8] DAW MS, COMMUNICATION

[9] QUANTUM STATES OF CONFINED CARRIERS IN VERY THIN ALXGA1-XAS-GAAS-ALXGA1-XAS HETEROSTRUCTURES [J]. PHYSICAL REVIEW LETTERS, 1974, 33 (14) : 827 - 830

[10] ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1980, 21 (10): : 4710 - 4720