AN INFRARED AND NEUTRON-SCATTERING ANALYSIS OF THE PRECIPITATION OF OXYGEN IN DISLOCATION-FREE SILICON

被引:116
作者
LIVINGSTON, FM [1 ]
MESSOLORAS, S [1 ]
NEWMAN, RC [1 ]
PIKE, BC [1 ]
STEWART, RJ [1 ]
BINNS, MJ [1 ]
BROWN, WP [1 ]
WILKES, JG [1 ]
机构
[1] MULLARD LTD,MAT DEV LAB,SOUTHAMPTON SO9 7BH,ENGLAND
来源
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 34期
关键词
D O I
10.1088/0022-3719/17/34/025
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:6253 / 6276
页数:24
相关论文
共 44 条
[11]  
DEKOCK AJR, 1983, AGGREGATION PHENOMEN, P58
[12]   OXYGEN DIFFUSION IN SILICON AND THE INFLUENCE OF DIFFERENT DOPANTS [J].
GASS, J ;
MULLER, HH ;
STUSSI, H ;
SCHWEITZER, S .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2030-2037
[13]   OXYGEN DIFFUSION AND THERMAL DONOR FORMATION IN SILICON [J].
GOSELE, U ;
TAN, TY .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 28 (02) :79-92
[14]  
Guinier A, 1937, CR HEBD ACAD SCI, V204, P1115
[15]   THEORY OF DIFFUSION-LIMITED PRECIPITATION [J].
HAM, FS .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 6 (04) :335-351
[16]  
HELMREICH D, 1977, SEMICONDUCTOR SILICO, P626
[17]   THE SOLUBILITY OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
KAISER, RH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 9 (3-4) :214-216
[18]   EVIDENCE FOR INTERNAL ROTATION IN THE FINE STRUCTURE OF THE INFRARED ABSORPTION OF OXYGEN IN SILICON [J].
HROSTOWSKI, HJ ;
ALDER, BJ .
JOURNAL OF CHEMICAL PHYSICS, 1960, 33 (04) :980-990
[19]   EFFECTS OF AMBIENTS ON OXYGEN PRECIPITATION IN SILICON [J].
HU, SM .
APPLIED PHYSICS LETTERS, 1980, 36 (07) :561-564