OPTIMIZATION OF ION-BEAM-INDUCED CHARGE MICROSCOPY FOR THE ANALYSIS OF INTEGRATED-CIRCUITS

被引：14

作者：

BREESE, MBH

SAINT, A

SEXTON, FW

HOM, KM

SCHONE, H

DOYLE, BL

LAIRD, JS

LEGGE, GJF

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

[2] UNIV OXFORD,NUCL PHYS LAB,SPM UNIT,OXFORD OX1 3RH,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.358613

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The conditions necessary for obtaining both the maximum topographical image contrast and the maximum insensitivity to ion induced damage using ion-beam induced charge microscopy are presented and interpreted in terms of existing energy loss and damage theory. Ion-beam induced charge images and pulse-height spectra which are measured from a Sandia SA3002 memory device using MeV H +, H+2, and 4He+ ions with a range of incident energies are used to characterize these optimum experimental conditions. It is shown that ions which are stopped within the device depletion layers generate charge pulses which are much less sensitive to ion induced damage than longer range ions which are stopped in the device substrate. © 1995 American Institute of Physics.

引用

页码：3734 / 3741

页数：8

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