ENERGY DEPENDENCE ON PROTON IRRADIATION DAMAGE IN SILICON

被引：29

作者：

ROSENZWEIG, W

BROWN, WL

SMITS, FM

机构：

来源：

关键词：

D O I：

10.1063/1.1713827

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2707 / &

共 7 条

[1] PROTON INDUCED LATTICE DISPLACEMENTS IN SILICON [J].

BAICKER, JA ;

FLICKER, H ;

VILMS, J .

[2]

DENNEY JM, NAS51851

[3]

DINES GJ, 1957, RADIATION EFFECTS SO

LOFERSKI, JJ ;

RAPPAPORT, P .

PHYSICAL REVIEW, 1958, 111 (02) :432-439

[5] SOLAR CELL DEGRADATION UNDER 1-MEV ELECTRON BOMBARDMENT [J].

ROSENZWEIG, W ;

GUMMEL, HK ;

SMITS, FM .

BELL SYSTEM TECHNICAL JOURNAL, 1963, 42 (02) :399-+

[6]

ROSENZWEIG W, 1962, BELL SYST TECH J, V41, P1573

[7] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS [J].

SHOCKLEY, W ;

READ, WT .

PHYSICAL REVIEW, 1952, 87 (05) :835-842