THE EFFECT OF ACTIVE LAYER THICKNESS ON LATERAL WAVEGUIDING IN NARROW-STRIPE GAIN-GUIDED ALGAAS DH LASER-DIODES

被引：11

作者：

BIESTERBOS, JWM

BROUWER, RP

VALSTER, A

DEPOORTER, JA

ACKET, GA

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071975

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：961 / 965

页数：5

共 13 条

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[6] LATERAL-MODES AND SELF-OSCILLATIONS IN NARROW-STRIPE DOUBLE-HETEROSTRUCTURE GAAL-AS INJECTION-LASERS [J].

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[9] SOME RELATIONS FOR THE FAR-FIELD DISTRIBUTION OF SEMICONDUCTOR-LASERS WITH GAIN-GUIDING [J].

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