LAMBDA/4-SHIFTED INGAASP INP DFB LASERS BY SIMULTANEOUS HOLOGRAPHIC EXPOSURE OF POSITIVE AND NEGATIVE PHOTORESISTS

被引：72

作者：

UTAKA, K

AKIBA, S

SAKAI, K

MATSUSHIMA, Y

机构：

[1] KDD, Research & Development Lab,, Tokyo, Jpn, KDD, Research & Development Lab, Tokyo, Jpn

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 24期

关键词：

D O I：

10.1049/el:19840686

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LASERS, SEMICONDUCTOR

引用

收藏

页码：1008 / 1010

页数：3

相关论文

共 8 条

[1] AKIBA S, 1983, IEEE J QUANTUM ELECT, V19, P1052, DOI 10.1109/JQE.1983.1071962
[2] ANTISYMMETRIC TAPER OF DISTRIBUTED FEEDBACK LASERS
HAUS, HA
SHANK, CV
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1976, 12 (09) : 532 - 539
[3] 1.5-MU-M PHASE ADJUSTED ACTIVE DISTRIBUTED REFLECTOR LASER FOR COMPLETE DYNAMIC SINGLE-MODE OPERATION
KOYAMA, F
SUEMATSU, Y
KOJIMA, K
FURUYA, K
[J]. ELECTRONICS LETTERS, 1984, 20 (10) : 391 - 393
[4] 1.5-MU-M PHASE-SHIFTED DFB LASERS FOR SINGLE-MODE OPERATION
SEKARTEDJO, K
EDA, N
FURUYA, K
SUEMATSU, Y
KOYAMA, F
TANBUNEK, T
[J]. ELECTRONICS LETTERS, 1984, 20 (02) : 80 - 81
[5] EFFECT OF EXTERNAL REFLECTORS ON LONGITUDINAL MODES OF DISTRIBUTED FEEDBACK LASERS
STREIFER, W
BURNHAM, RD
SCIFRES, DR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (04) : 154 - 161
[6] EFFECT OF MIRROR FACETS ON LASING CHARACTERISTICS OF DISTRIBUTED FEEDBACK INGAASP/INP LASER-DIODES AT 1.5 MU-M RANGE
UTAKA, K
AKIBA, S
SAKAI, K
MATSUSHIMA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 236 - 245
[7] ANALYSIS OF QUARTER-WAVE-SHIFTED DFB LASER
UTAKA, K
AKIBA, S
SAKAI, K
MATSUSHIMA, Y
[J]. ELECTRONICS LETTERS, 1984, 20 (08) : 326 - 327
[8] HIGH-QUALITY INP SURFACE CORRUGATIONS FOR 1.55-MU-M INGAASP DFB LASERS FABRICATED USING ELECTRON-BEAM LITHOGRAPHY
WESTBROOK, LD
NELSON, AW
DIX, C
[J]. ELECTRONICS LETTERS, 1982, 18 (20) : 863 - 865