GEXSI1-X STRAINED-LAYER SUPERLATTICE WAVE-GUIDE PHOTODETECTORS OPERATING NEAR 1.3 MU-M

被引：167

作者：

TEMKIN, H

PEARSALL, TP

BEAN, JC

LOGAN, RA

LURYI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 15期

关键词：

D O I：

10.1063/1.96624

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：963 / 965

页数：3

共 11 条

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NAKAHARA, S ;

ROBINSON, IK .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :436-440

[2]

BEAN JC, 1985, S LAYERED STRUCTURES, P245

[3]

BEAN JC, 1985, 1ST P INT S SIL MOL, P339

[4]

KAGAWA S, 1982, FUJITSU SCI TECH J, V18, P397

[5]

KASTALSKY A, 1985, 1ST P INT S SI MOL B, P408

[6] MEASUREMENT OF THE BAND-GAP OF GEXSI1-X/SI STRAINED-LAYER HETEROSTRUCTURES [J].

LANG, DV ;

PEOPLE, R ;

BEAN, JC ;

SERGENT, AM .

APPLIED PHYSICS LETTERS, 1985, 47 (12) :1333-1335

[7] NEW INFRARED DETECTOR ON A SILICON CHIP [J].

LURYI, S ;

KASTALSKY, A ;

BEAN, JC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (09) :1135-1139

[8]

LURYI S, UNPUB

[9] MODULATION DOPING IN GEXSI1-X/SI STRAINED LAYER HETEROSTRUCTURES [J].

PEOPLE, R ;

BEAN, JC ;

LANG, DV ;

SERGENT, AM ;

STORMER, HL ;

WECHT, KW ;

LYNCH, RT ;

BALDWIN, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1231-1233

[10]

PEOPLE R, 1985, PHYS REV B, V32, P405

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