DETAILED ANALYSIS OF COHERENCE COLLAPSE IN SEMICONDUCTOR-LASERS

被引：64

作者：

LI, H ^{[1
]}

YE, J ^{[1
]}

MCINERNEY, JG ^{[1
]}

机构：

[1] NATL UNIV IRELAND UNIV COLL CORK,DEPT PHYS,CORK,CORK,IRELAND

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 09期

关键词：

D O I：

10.1109/3.247700

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental and theoretical studies of coherence collapse in GaAs/AlGaAs laser diodes with weak optical feedback show two distinct routes to chaos. In each case we observe undamped relaxation oscillations, then external cavity mode beating, and finally coherence collapse. When there is frequency locking between the relaxation oscillations and external cavity modes, a period doubling sequence is followed, otherwise the route to chaos is via quasiperiodicity.

引用

页码：2421 / 2432

页数：12

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