IMPURITY TRAPPED INTERSTITIALS AND THE LOW TEMPERATURE ANNEALING STAGES OF IRRADIATED COPPER

被引：23

作者：

HASIGUTI, RR

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1960年 / 15卷 / 10期

关键词：

D O I：

10.1143/JPSJ.15.1807

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：1807 / 1814

页数：8

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共 19 条

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