X-RAY PHOTOEMISSION SPECTRA OF VALENCE AND INNER SHELLS IN AMORPHOUS GE-SE SYSTEM

[1] ANGULAR-RESOLVED UV PHOTOEMISSION AND BAND-STRUCTURE OF GES [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 832 - 842

[2] THERMALLY INDUCED EFFECTS IN AMORPHOUS GESE2 AND GESE FILMS STUDIED BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 379 - 382

[3] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[4] SPECTROSCOPIC STUDIES OF THE STRUCTURE OF AMORPHOUS SE-GE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 1215 - 1220

[5] LUCOVSKY G, 1977, 7TH P INT C AM LIQ S, P130

[6] Sayers D. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P403

[7] VALENCE BANDS OF AMORPHOUS AND CRYSTALLINE GETE DETERMINED BY X-RAY AND UV PHOTOEMISSION [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (01): : 245 - 256

[8] STUDY OF PHOTOINDUCED EFFECT IN OBLIQUELY-DEPOSITED AMORPHOUS GE-SE FILMS BY XPS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L519 - L522

[9] PROPERTY AND ORIGIN OF PARAMAGNETIC DEFECTS IN AMORPHOUS GE-S AND GE-S-AG [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (05) : 1603 - 1609

[1] ANGULAR-RESOLVED UV PHOTOEMISSION AND BAND-STRUCTURE OF GES [J]. PHYSICAL REVIEW B, 1977, 16 (02): : 832 - 842

[2] THERMALLY INDUCED EFFECTS IN AMORPHOUS GESE2 AND GESE FILMS STUDIED BY ULTRAVIOLET PHOTOELECTRON-SPECTROSCOPY [J]. SOLID STATE COMMUNICATIONS, 1980, 35 (04) : 379 - 382

[3] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215

[4] SPECTROSCOPIC STUDIES OF THE STRUCTURE OF AMORPHOUS SE-GE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 1215 - 1220

[5] LUCOVSKY G, 1977, 7TH P INT C AM LIQ S, P130

[6] Sayers D. E., 1974, 5th International Conference on amorphous and liquid semiconductors, Vol.I, P403

[7] VALENCE BANDS OF AMORPHOUS AND CRYSTALLINE GETE DETERMINED BY X-RAY AND UV PHOTOEMISSION [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1973, 57 (01): : 245 - 256

[8] STUDY OF PHOTOINDUCED EFFECT IN OBLIQUELY-DEPOSITED AMORPHOUS GE-SE FILMS BY XPS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (09) : L519 - L522

[9] PROPERTY AND ORIGIN OF PARAMAGNETIC DEFECTS IN AMORPHOUS GE-S AND GE-S-AG [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1978, 45 (05) : 1603 - 1609