DETERMINATION OF IMPLANTED ELECTRICAL PROFILES BY A MICROWAVE CONTACTLESS METHOD - APPLICATION TO SELENIUM IMPLANTATION IN SEMI-INSULATING INP

被引：5

作者：

BELLEC, M ^{[1
]}

LECLEACH, X ^{[1
]}

FAVENNEC, PN ^{[1
]}

LHARIDON, H ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,ICM,TOH,F-22301 LANNION,FRANCE

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1983年 / 209卷 / MAY期

关键词：

Electric properties - Microwaves - Selenium;

D O I：

10.1016/0167-5087(83)90859-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A new method was developed for doping profile determination of implanted layers, based on the microwave properties of the semiconductors. The microwave method is contactless and it was applied to the electron carrier and mobility profiles obtained after selenium implantations in semi-insulating indium phosphide substrates.

引用

页码：629 / 635

页数：7

共 10 条

[1]

GREGORKIEWICK T, 1980, RAD EFFECTS, V52, P170

[2]

LECLEACH X, UNPUB

[3]

LECLEACH X, 1982, REV PHYS APPL, V17

[4]

LECLEACH X, 1982, REV PHYS APPL, V17, P486

[5] DEMAGNETIZING FACTORS OF THE GENERAL ELLIPSOID [J].

OSBORN, JA .

PHYSICAL REVIEW, 1945, 67 (11-1) :351-357

[6]

SAYED MM, 1975, REV SCI INSTRUM, V46, P1077

[7] ELECTRIC AND MAGNETIC PROPERTIES OF LINEAR CONDUCTING CHAINS [J].

SHCHEGOLEV, IF .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01) :9-+

[8] MICROWAVE ELECTRONICS [J].

SLATER, JC .

REVIEWS OF MODERN PHYSICS, 1946, 18 (04) :441-512

[9]

WATANABE N, 1960, REV ELEC COMMUN LAB, V8, P256

[10]

1963, HDB MICROWAVE MEASUR, V2

← 1 →