METHOD OF TUNGSTEN DOPANT DEPOSITION FOR DUAL-DIELECTRIC CHARGE-STORAGE CELLS

被引：5

作者：

LIGENZA, JR ^{[1
]}

KAHNG, D ^{[1
]}

LEPSELTER, MP ^{[1
]}

LABATE, E ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

关键词：

D O I：

10.1109/T-ED.1977.18782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：581 / 583

页数：3

共 8 条

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[2] The beam shaping in the molecular flow.
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[J]. ZEITSCHRIFT FUR PHYSIK, 1930, 66 (7-8): : 471 - 476
[3] INTERFACIAL DOPANTS FOR DUAL-DIELECTRIC, CHARGE-STORAGE CELLS
KAHNG, D
SUNDBURG, WJ
BOULIN, DM
LIGENZA, JR
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (09): : 1723 - 1739
[4] KOFSTAD P, 1966, HIGH TEMPERATURE OXI, P254
[5] MARGRAVE JL, 1967, CHARACTERIZATION HIG, P497
[6] MASS-SPECTROMETRIC STUDY OF OXIDATION OF TUNGSTEN
SCHISSEL, PO
TRULSON, OC
[J]. JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (02) : 737 - &
[7] ZUBER EG, 1970, J PHYS CHEM, V74, P2479
[8] 1974, HDB CHEMISTRY PHYSIC, pE226