PHOTOCURRENT AMPLIFICATION IN SCHOTTKY PHOTODIODES

被引：8

作者：

DONALD, DK

WANG, SY

RANGANATH, TR

NEWTON, SA

TRUTNA, WR

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 10期

关键词：

D O I：

10.1063/1.97097

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：567 / 568

页数：2

共 10 条

[1] LATERAL PHOTODETECTORS ON SEMI-INSULATING INGAAS AND INP [J].

DIADIUK, V ;

GROVES, SH .

APPLIED PHYSICS LETTERS, 1985, 46 (02) :157-158

[2]

DONALD DK, 1985, P SOC PHOTO-OPT INST, V545, P29, DOI 10.1117/12.948341

[3]

FAHRENBRUCH AL, 1983, FUNDAMENTALS SOLAR C, P170

[4] PHOTOVALTAIC PROPERTIES OF CU2S-CDS HETEROJUNCTIONS [J].

GILL, WD ;

BUBE, RH .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3731-&

[5] LARGE-SIGNAL SURFACE PHOTOVOLTAGE STUDIES WITH GERMANIUM [J].

JOHNSON, EO .

PHYSICAL REVIEW, 1958, 111 (01) :153-166

[6] PHOTODETECTION BY LIGHT-INDUCED BARRIER MODULATION IN CU-DIFFUSED AU-CDS DIODES [J].

LUBBERTS, G ;

BURKEY, BC ;

BUCHER, HK ;

WOLF, EL .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (05) :2180-2190

[7]

MANY A, 1965, SEMICONDUCTOR SURFAC, P349

[8]

MULLER RS, 1977, DEVICE ELECTRONICS I, P69

[9] 20-GHZ BANDWIDTH GAAS PHOTO-DIODE [J].

WANG, SY ;

BLOOM, DM ;

COLLINS, DM .

APPLIED PHYSICS LETTERS, 1983, 42 (02) :190-192

[10]

WANG SY, 1983, LAS FOCUS-ELECTRO-OP, V19, P99

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