STUDIES ON REACTION PROCESSES OF HYDROGEN AND OXYGEN-ATOMS WITH H2O-ADSORBED SI(100) SURFACES BY HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY

被引：23

作者：

IKEDA, H

HOTTA, K

YAMADA, T

ZAIMA, S

YASUDA, Y

机构：

[1] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Nagoya, 464-01, Furo-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1995年 / 34卷 / 4B期

关键词：

GAS-SOLID INTERFACE; SURFACE REACTION; OXIDATION; HREELS; H2O ADSORBED SI(100) SURFACE; UPTAKE OF OXYGEN ATOM; LANGMUIR ADSORPTION EQUATION;

D O I：

10.1143/JJAP.34.2191

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Surface-reactions of H2O-adsorbed Si(100) with atomic hydrogen and oxygen have been examined by high-resolution electron energy loss spectroscopy (HREELS). The surface with saturated coverage of H2O is terminated by H and OH species and the sticking probability of H2O is estimated to be 0.9. This surface is stable for the adsorption of molecular oxygen at room temperature. The presence of dissociation sites of oxygen molecules such as dangling bonds is considered to be essential to the oxidation of Si(100) surfaces. By the reaction of H2O-adsorbed Si(100) with atomic hydrogen, the uptake of oxygen atoms of Si-OH bonds into sites of Si back bonds occurs even at room temperature.

引用

页码：2191 / 2195

页数：5

共 18 条

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