THEORETICAL AND EXPERIMENTAL ANALYSIS OF GERMANIUM TUNNEL DIODE CHARACTERISTICS

被引：18

作者：

MINTON, RM

GLICKSMAN, R

机构：

来源：

SOLID-STATE ELECTRONICS | 1964年 / 7卷 / 07期

关键词：

D O I：

10.1016/0038-1101(64)90085-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：491 / 500

页数：10

共 26 条

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[8] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J].

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[9] TUNNELING PROBABILITY IN GERMANIUM P-N JUNCTIONS [J].

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