MEASUREMENT OF STRAINS AT SI-SIO2 INTERFACE

[1] BLACKBURN H, 1961, 8 T VAC S, P943

[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[3] CHARLES RJ, 1960, J APPL PHYS, V31, P741

[4] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[5] CRITTENDEN EC, 1950, PHYS REV, V78, P349

[6] LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD [J]. PHYSICA STATUS SOLIDI, 1962, 2 (08): : 984 - 987

[7] FINEGAN JD, 1961, 8TH T NAT VAC S, P935

[8] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &

[9] THEORY OF PLANE ELASTIC WAVES IN A PIEZOELECTRIC CRYSTALLINE MEDIUM AND DETERMINATION OF ELASTIC AND PIEZOELECTRIC CONSTANTS OF QUARTZ [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1467 - 1473

[10] MILLER PD, PRIVATE COMMUNICATIO

[1] BLACKBURN H, 1961, 8 T VAC S, P943

[2] CALCULATION OF STRESS IN ELECTRODEPOSITS FROM THE CURVATURE OF A PLATED STRIP [J]. JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS, 1949, 42 (02): : 105 - 123

[3] CHARLES RJ, 1960, J APPL PHYS, V31, P741

[4] VELOCITIES AND DENSITIES OF DISLOCATIONS IN GERMANIUM AND OTHER SEMICONDUCTOR CRYSTALS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (09) : 2736 - &

[5] CRITTENDEN EC, 1950, PHYS REV, V78, P349

[6] LATTICE CONSTANTS AND THERMAL EXPANSION OF SILICON UP TO 900-DEGREES-C BY X-RAY METHOD [J]. PHYSICA STATUS SOLIDI, 1962, 2 (08): : 984 - 987

[7] FINEGAN JD, 1961, 8TH T NAT VAC S, P935

[8] LOWERING BREAKDOWN VOLTAGE OF SILICON P-N JUNCTIONS BY STRESS [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) : 1851 - &

[9] THEORY OF PLANE ELASTIC WAVES IN A PIEZOELECTRIC CRYSTALLINE MEDIUM AND DETERMINATION OF ELASTIC AND PIEZOELECTRIC CONSTANTS OF QUARTZ [J]. PHYSICAL REVIEW, 1958, 109 (05): : 1467 - 1473

[10] MILLER PD, PRIVATE COMMUNICATIO