BEND-RESISTANCE CHARACTERISTICS OF MACROSCOPIC 4-TERMINAL DEVICES WITH A HIGH ELECTRON-MOBILITY

被引：12

作者：

TARUCHA, S

SAKU, T

HIRAYAMA, Y

HORIKOSHI, Y

机构：

[1] NTT Basic Research Laboratories, Musashino-shi, Tokyo 180, 3-9-11, Midori-cho

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.45.13465

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bend-resistance characteristics are studied for four-terminal ballistic devices with a high electron mobility on a macroscopic scale of order 10-100-mu-m. The negative bend resistance induced by ballistic electron transport is quantitatively reproduced by the Landauer-Buttiker formula in the classical limit for various device sizes and electron densities. Using this formula, we determine the ballistic electron length as a function of electron density, which compares well with the elastic mean free path deduced from the electron mobility and electron density.

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页码：13465 / 13468

页数：4

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