DEEP-LEVEL TRANSIENT SPECTROSCOPY OF HIGH-ENERGY HEAVY-ION IRRADIATION-INDUCED DEFECTS IN N-TYPE GERMANIUM

被引：14

作者：

MARIE, P

LEVALOIS, M

BOGDANSKI, P

机构：

[1] Laboratoire d'Etudes et de Recherches Sur Les Materiaux, URA No. 1317, ISMRa, 14050 CAEN Cedex

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 02期

关键词：

D O I：

10.1063/1.354879

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Swift heavy ion irradiation-induced defects have been studied in n-type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at E(c)-0.22, E(c)-0.275, E(c)-0.29, E(c)-0.32, and E(c)-0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200-degrees-C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.

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页码：868 / 871

页数：4

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