PULSE-HEIGHT DEFECT OF SILICON SURFACE BARRIER DETECTORS FOR URANIUM IONS IN RANGE OF 20 TO 120 MEV

被引：6

作者：

BETZ, G

ISELE, HJ

ROSSLE, E

HORTIG, G

机构：

[1] UNIV FREIBURG,FAK PHYS,D-78 FREIBURG,WEST GERMANY

[2] MAX PLANCK INST KERNPHYS,D-69 HEIDELBERG,WEST GERMANY

来源：

NUCLEAR INSTRUMENTS & METHODS | 1974年 / 121卷 / 03期

关键词：

D O I：

10.1016/0029-554X(74)90217-1

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：589 / 590

页数：2

共 8 条

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[3] PULSE HEIGHT DEFECT AND ENERGY DISPERSION IN SEMICONDUCTOR DETECTORS [J].

HAINES, EL ;

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[4] ENERGY DEPENDENCE OF PULSE HEIGHT DEFECT IN SILICON PARTICLE DETECTORS [J].

KRULISCH, AH ;

AXTMANN, RC .

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[5]

Lindhard J., 1963, VIDENSK SELSK MAT FY, V33, P1, DOI DOI 10.1002/ADMA.200904153

[6]

MILLER GL, 1962, NUCL ELECTRON, P477

[7] PULSE-HEIGHT RESPONSE CHARACTERISTICS FOR HEAVY-IONS IN SILICON SURFACE-BARRIER DETECTORS [J].

STEINBERG, EP ;

WILKINS, BD ;

FLUSS, MJ ;

GROSS, CE ;

KAUFMAN, SB .

NUCLEAR INSTRUMENTS & METHODS, 1972, 99 (02) :309-+

[8] PULSE-HEIGHT DEFECTS FOR HEAVY IONS IN A SILICON SURFACE-BARRIER DETECTOR [J].

WILKINS, BD ;

FLUSS, MJ ;

KAUFMAN, SB ;

GROSS, CE ;

STEINBERG, EP .

NUCLEAR INSTRUMENTS & METHODS, 1971, 92 (03) :381-+

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