H2S adsorption on the (110) surfaces of III-V semiconductors

被引：20

作者：

Dudzik, E

Muller, C

McGovern, IT

Lloyd, DR

Patchett, A

Zahn, DRT

Johal, T

McGrath, R

机构：

[1] TECH UNIC CHEMNITZ,CHEMNITZ,GERMANY

[2] IRC LIVERPOOL,LIVERPOOL,MERSEYSIDE,ENGLAND

来源：

SURFACE SCIENCE | 1995年 / 344卷 / 1-2期

关键词：

chemisorption; gallium arsenide; gallium phosphide; hydrogen sulphide; indium phosphide; low energy electron diffraction (LEED); nuclear reaction analysis;

D O I：

10.1016/0039-6028(95)00799-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption of H2S on cleaved (110) surfaces of InP, GaP and GaAs has been studied by core level soft X-ray photoelectron spectroscopy (SXPS) and angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) using synchrotron radiation. H2S adsorption occurs at room temperature on InP and GaP. At low exposures (up to 5 L) the surface component of the cation spectra (In 4d, Ga 3d) is strongly reduced while that of the P 2p core level spectra is replaced by a component at higher binding energy. The S 2p spectrum shows a single component and the valence band spectra show sharp new features. This adsorbate can be removed by gentle annealing. Adsorption on GaAs does not occur at room temperature, but low temperature (200 K) adsorption yields SXPS and ARUPS spectra which indicate that this low exposure adsorption process is essentially the same for all three substrates. A model of dissociative adsorption consistent with these photoelectron data is presented.

引用

页码：1 / 10

页数：10

共 22 条

[1] ALKALI ADSORPTION ON GAAS(110) - ATOMIC-STRUCTURE, ELECTRONIC STATES AND SURFACE DIPOLES [J].

BECHSTEDT, F ;

SCHEFFLER, M .

SURFACE SCIENCE REPORTS, 1993, 18 (5-6) :145-198

[2] SURFACE-DISORDER EFFECTS IN ANGLE-RESOLVED PHOTOEMISSION SPECTRA [J].

CERRINA, F ;

MYRON, JR ;

LAPEYRE, GJ .

PHYSICAL REVIEW B, 1984, 29 (04) :1798-1802

[3] THE ADSORPTION OF H2S ON INP(110) AND GAP(110) [J].

DUDZIK, E ;

WHITTLE, R ;

MULLER, C ;

MCGOVERN, IT ;

NOWAK, C ;

MARKL, A ;

HEMPELMANN, A ;

ZAHN, DRT ;

CAFOLLA, A ;

BRAUN, W .

SURFACE SCIENCE, 1994, 307 (pt A) :223-227

[4]

DUDZIK E, IN PRESS

[5] STRUCTURE AND BONDING OF TETRAHEDRALLY COORDINATED COMPOUND SEMICONDUCTOR CLEAVAGE FACES [J].

DUKE, CB .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1992, 10 (04) :2032-2040

[6] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

CARELLI, J .

PHYSICAL REVIEW B, 1982, 26 (02) :803-814

[7]

EASTMAN DE, 1980, PHYS REV LETT, V45, P656, DOI 10.1103/PhysRevLett.45.656

[8]

GREENWOOD NN, 1984, CHEM ELEMENTS

[9] THEORETICAL AND EXPERIMENTAL STUDIES OF THE PHOTOEMISSION CURRENT FROM GAAS(110) [J].

HENK, J ;

SCHATTKE, W ;

BARNSCHEIDT, HP ;

JANOWITZ, C ;

MANZKE, R ;

SKIBOWSKI, M .

PHYSICAL REVIEW B, 1989, 39 (18) :13286-13292

[10]

HUGHES G, 1961, VACUUM, V31, P539

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